Deposition of charge trapping layers

ABSTRACT

A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit and priority of Provisional Application No. 62/413,869, filed on Oct. 27, 2016, entitled “DEPOSITION OF CHARGE TRAPPING LAYERS,” the contents of which are hereby incorporated by reference to the extent the contents do not conflict with the present disclosure.

FIELD OF INVENTION

The present disclosure generally relates to devices and processes for manufacturing electronic devices. More particularly, the disclosure relates to charge trapping layers with improved retention and speed and the processes of forming them. Specifically, the disclosure discloses metal oxynitride films for Vertical NAND (VNAND) devices.

BACKGROUND OF THE DISCLOSURE

NAND devices have been in production with applications in flash memory. Specifically, NAND devices work with main stream non-volatile flash memory devices. An example of a current NAND device is a Metal-Oxide-Nitride-Oxide-Silicon (“MONOS”) cell stack. FIG. 1 illustrates such a MONOS cell stack 100.

The MONOS cell stack 100 may comprise a silicon substrate 110, a silicon oxide layer 120, a silicon nitride layer 130, an aluminum oxide layer 140, and a Platinum layer 150. The silicon oxide layer 120 serves as a tunnel layer (TL), while the silicon nitride layer 130 serves as a charge trapping layer (CTL). The MONOS cell stack 100 may comprise an additional silicon oxide layer to serve as a blocking layer (BL).

The silicon nitride layer 130 may be formed through a low pressure chemical vapor deposition (LPCVD) process. However, the silicon nitride layer 130 displays characteristics that adversely affect its operation. For one thing, the silicon nitride layer 130 is relatively shallow, and does not show great retention of charge due to the shallow traps. In addition, the silicon nitride layer 130 displays a low conduction band offset with the tunnel layer. With a low dielectric constant or k-value of the silicon nitride layer 130, a program/erase speed of the memory device may be limited.

CTLs made from aluminum nitride (AlN) have also been attempted. The AlN has been deposited through physical vapor deposition (PVD) processes. However, PVD has not shown to be suitable for deposition in three-dimensional structures with large height-to-width ratios or aspect ratios necessary for VNAND devices due to its poor uniformity and step coverage.

As a result, a device and method with improved retention and speed of charge trapping layers is desired.

SUMMARY OF THE DISCLOSURE

In accordance with at least one embodiment of the invention, a semiconductor device is disclosed, comprising: an oxide core or hole; a channel; a tunnel oxide; and a charge trapping layer comprising at least one of: aluminum nitride or aluminum oxynitride; a first blocking oxide; wherein the aluminum nitride or aluminum oxynitride charge trapping layer comprises a nitrogen component that tunes an erase speed of the aluminum oxynitride charge trapping layer and tunes a retention capability of the charge trapping layer comprising aluminum nitride or aluminum oxynitride.

In accordance with at least one embodiment of the invention, a method of forming a charge trapping layer is disclosed. The method comprises: performing a nitrogen precursor cycle; repeating the nitrogen precursor cycle as needed to obtain a desired nitrogen content in a charge trapping layer; performing an oxygen precursor cycle; and repeating the oxygen precursor cycle as needed to obtain a desired oxygen content in the charge trapping layer; wherein the charge trapping layer comprises a metal oxynitride such that the desired nitrogen content tunes an erase speed of the charge trapping layer; and wherein the charge trapping layer comprises a metal oxynitride such that the desired oxygen content tunes a retention capability of the charge trapping layer.

In accordance with at least one embodiment of the invention, a method of forming an aluminum nitride or aluminum oxynitride layer for a NAND device is disclosed. The method comprises: exposing a substrate to nitrogen precursor; and exposing the substrate to aluminum precursor; wherein a reaction between the nitrogen precursor and the aluminum precursor forms an aluminum nitride or aluminum oxynitride layer for a NAND device.

In accordance with at least one embodiment of the invention, a method of forming a charge trapping layer for a NAND device is disclosed. The method comprises: forming an aluminum nitride or aluminum oxynitride layer by sequential vapor deposition process; wherein the aluminum nitride or aluminum oxynitride layer is the charge trapping layer in NAND device.

For purposes of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described herein above. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein without necessarily achieving other objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures, the invention not being limited to any particular embodiment(s) disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain embodiments, which are intended to illustrate and not to limit the invention.

FIG. 1 is a cross-sectional view of a planar NAND semiconductor device.

FIG. 2 is a top cross-sectional view of a semiconductor device in accordance with at least one embodiment of the invention.

FIGS. 3A and 3B are cross-sectional views of a semiconductor device in accordance with at least one embodiment of the invention.

FIGS. 4A, 4B, 4C and 4D are flow charts for making a semiconductor device in accordance with at least one embodiment of the invention.

FIG. 5 is a flow chart for making a semiconductor device in accordance with at least one embodiment of the invention.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and/or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

FIG. 2 illustrates a VNAND device 200 in accordance with at least one embodiment of the invention. The VNAND device 200 may comprise an oxide core or hole 210, a channel 220, a tunnel oxide layer 230, a charge trapping layer 240, a first blocking oxide 250, a second blocking oxide 260, and a control gate 270.

A status of the VNAND device may define operation of the charge trapping layer 240. When the VNAND device 200 is set to a programmed “0” status, the charge trapping layer 240 may store electrons, which may induce a shift of threshold voltage in a transistor. The charge trapping layer 240 may not store electrons when the VNAND device 200 is set to an erased “1” status. The ability of the charge trapping layer 240 to remove or retain electrons a long time may define a threshold voltage and a conduction band offset of the VNAND device 200 over time. In addition, the ability to remove or retain electrons over time may define the devices ability to serve as a memory device.

A smaller conduction band offset may cause an issue in retention of memory. As a result, a larger conduction band offset may be desired. A larger conduction band offset may be achieved through a charge trapping layer comprising Aluminum Nitride (AlN) or Aluminum Oxynitride (AlON).

FIG. 3A illustrates a vertical gate stack 300 in accordance with at least one embodiment of the invention. The vertical gate stack 300 may comprise a substrate 310; a Common Source Line (CSL) 320; a poly-Silicon channel 330; a gate 340; a trap layer 350; a Ground Select Line (GSL) gate 360; a control gate 370; and a String Select Line (SSL) gate 380. The substrate 310 may comprise a semiconductor substrate, such as a p-type substrate comprising silicon. The gate 340 may comprise metal or metallic material, such as a tungsten compound, a conductive metal compound, or a metal nitride. The trap layer 350 may comprise aluminum nitride, aluminum oxynitride, or any other nitride or oxynitride, for example. A blocking layer (not shown) and some other additional layers/materials may be disposed between the trap layer 350 and the gate 340. There also may be additional layers or materials on both sides of the trap layer 350 that partially or fully follow the trap layer 350. For example, there might be tunnel oxide layers and blocking oxide layers, which are not shown for simplicity reasons.

In some embodiments, the substrate comprises a silicon semiconductor wafer having a diameter from about 100 mm to about 450 mm, or from about 200 to about 300 mm. In other embodiments, the substrate may comprise other types of substrates, such as: glass; semiconductor; like-compound semiconductors, for example III-V or II-VI semiconductors; oxides; and various other types of substrates, such as non-planar or planar substrates.

The silicon oxide layer (not shown) in contact with the trap layer 350 may have a thickness ranging between 1 and 20 nm, between 1.5 nm and 15 nm, between 2 nm and 10 nm, and between 3 and 8 nm. The silicon oxide layer 320 may be formed through high temperature oxide (HTO) deposition processes.

The trap layer 350 may comprise aluminum nitride or aluminum oxynitride and may have a thickness ranging between 2-10 nm, or preferably between 4-8 nm, or more preferably between 5-6 nm. The aluminum nitride or aluminum oxynitride layer 350 may be formed through atomic layer deposition (ALD) processes. The aluminum nitride or aluminum oxynitride layer 350 may be formed through chemical vapor deposition process (CVD), such as cyclical CVD or pulsed CVD processes.

The gate stack 300 may undergo a post dielectric deposition anneal step. The anneal step may comprise flowing an inert gas, such as nitrogen or argon, at a high temperature for a predetermined duration. The temperature of the anneal step may range between 350 and 1200° C., between 500 and 1100° C., or between 600 and 1050° C. At a temperature of approximately 1050° C., for example, a flash or spike anneal may take place. The anneal step may have a duration ranging between 1 and 20 minutes, or preferably between 5 and 10 minutes. During the post dielectric deposition anneal step some intermixing between oxidized part of the aluminum nitride or aluminum oxynitride film and the aluminum nitride or aluminum oxynitride film may occur therefore possibly leading to oxygen dispersion also the aluminum nitride or aluminum oxynitride layer beneath the oxidized part. These might have beneficial effect to the electrical properties of the NAND device, such as VNAND device. In some instances, there may be exposure to oxygen containing ambient, such as ambient air, like an air break, before the anneal process. In some instances, there may not be exposure to oxygen containing ambient before the anneal process.

FIG. 3B illustrates a vertical gate stack 300 in accordance with at least one embodiment of the invention. The vertical gate stack 300 may comprise a substrate 310; a Common Source Line (CSL) 320; a poly-Silicon channel 330; a gate 340; a trap layer 350; a capping layer 355; a Ground Select Line (GSL) gate 360; a control gate 370; and a String Select Line (SSL) gate 380. The substrate 310 may comprise a semiconductor substrate, such as a p-type substrate comprising silicon. The gate 340 may comprise metal or metallic material, such as a tungsten compound, a conductive metal compound, or a metal nitride. The trap layer 350 may comprise aluminum nitride, aluminum oxynitride, or any other nitride or oxynitride, for example. A blocking layer (not shown) and some other additional layers/materials may be disposed between the trap layer 350 and the gate 340. There also may be additional layers or materials on both sides of the trap layer 350 that partially or fully follow the trap layer 350. For example, there might be tunnel oxide layers and blocking oxide layers, which are not shown for simplicity reasons. The capping layer 355 may be formed on top of the trap layer 350, with the purpose of preventing oxidation of the trap layer 350.

FIG. 4A illustrates a manufacturing method 400 for a charge trapping layer in accordance with at least one embodiment of the invention. The method 400 comprises a nitrogen precursor cycle 410 and an oxygen precursor cycle 420. The nitrogen precursor cycle 410 may be repeated through a repeat cycle 430, while the oxygen precursor cycle 420 may be repeated through a repeat cycle 440. Both the nitrogen precursor cycle 410 and the oxygen precursor cycle 420 may be repeated through a repeat cycle 450. In another embodiment consistent with the invention, the nitrogen precursor cycle 410 may come after the oxygen precursor cycle 420.

The repeat cycles 430, 440, and 450 may affect a composition of the charge trapping layer formed. For example, the ratio of the repeat cycle 430 (nitrogen repeat cycle) to the repeat cycle 440 (oxygen repeat cycle) may affect the aluminum nitride (AlN) content and the aluminum oxide (Al₂O₃) content in the aluminum oxynitride film. The ratio of the repeat cycle 430 to the repeat cycle 440 may range: from 1:2 to about forming pure AlN (repeating the nitrogen cycle exclusively); from 1:1 to about 500:1; from 2:1 to 100:1; from 5:1 to 50:1; from 10:1 to 25:1; from 5:1 to pure AlN; from 10:1 to pure AlN. A higher aluminum nitride content may be beneficial for two reasons over the prior art SiN charge trapping layers: (1) improved program retention of more than about 3%, more than about 5% or more than about 7% when compared to SiN; and (2) a reduction of charge loss by a factor of more than about 1.33, more than about 1.66, or more than about 2 when compared to SiN. These improvements although small in numbers are substantial improvements over the SiN layers.

During further processing or exposure to an ambient environment, such as air, a top of the aluminum nitride or aluminum oxynitride film formed may be oxidized, resulting in a variety of film compositions. The top of the aluminum nitride or aluminum oxynitride film might contain only aluminum oxide, or up to 40, 50 or 60 at-% of oxygen. The top of the film may comprise at least one of: about pure aluminum nitride; less than a maximum of approximately 99 mol-% of Al₂O₃, less than a maximum of approximately 98 mol-% of Al₂O₃, less than a maximum of approximately 95 mol-% of Al₂O₃, less than a maximum of approximately 90 mol-% of Al₂O₃; or less than a maximum of about 80 mol-% of Al₂O₃. An aluminum nitride composition of the aluminum oxynitride film may comprise: more than about 25 mol-% of AlN; more than about 50 mol-% of AlN; more than about 75 mol-% of AlN; more than about 85 mol-% of AlN; more than about 90 mol-% of AlN; or more than about 95 mol-% of AlN.

An oxidized portion on top of the aluminum nitride or aluminum oxynitride film may be less than 10 nm, less than 5 nm, less than 3 nm or from about 0.1 nm to about 5 nm, from about 0.5 to about 3 nm, or from about 1 to about 2 nm. Oxidized top portion may form, for example, during further processing, such during the deposition of the blocking oxide or during exposure to the ambient air. The oxidized top portion may form by exposure of the aluminum nitride or aluminum oxynitride film to oxygen containing ambient, such as ambient air, H₂O, O₂ or other oxygen containing ambients. The oxidized top portion of aluminum nitride or aluminum oxynitride film may comprise more than about 50 mol-% of Al₂O₃, more than about 80 mol-% of Al₂O₃, more than about 90 mol-% of Al₂O₃, more than about 95 mol-% of Al₂O₃, more than about 98 mol-% of Al₂O₃, or in some instances almost fully of Al₂O₃. The oxidized top portion of aluminum nitride or aluminum oxynitride film may comprise more than about 30 at-% of oxygen, more than about 40 at-% of oxygen, more than about 50 at-% of oxygen, more than about 55 at-% of oxygen, or in some instances, almost fully of Al₂O₃ having stoichiometric amount of oxygen, which is about 60 at-%. The oxygen/aluminum ratio of the oxidized top portion of the aluminum nitride or aluminum oxynitride film may comprise: up to about 3:2 (O:Al), up to about 2:1, up to about 1:1, up to about 0.5:1, up to about 0.2:1, up to about 0.1:1, or up to about 0.05:1.

There also may be an oxidized bottom portion in the aluminum nitride or aluminum oxynitride film, which may form during the deposition of the aluminum nitride or aluminum oxynitride film or after the deposition of aluminum nitride or aluminum oxynitride film during an anneal process. For example, the nitride or aluminum oxynitride film may scavenge oxygen from the oxide layer or may slightly intermix during the annealing step. Generally, the composition of the oxidized bottom part of the aluminum nitride or aluminum oxynitride film may be the same as above for the oxidized top portion of the aluminum nitride or aluminum oxynitride film.

The atomic composition of the aluminum nitride or aluminum oxynitride films may be as follows. The nitrogen content of the aluminum oxynitride film may comprise: up to about 60 at-%; up to about 50 at-%; up to about 40 at-%; up to about 30 at-%; or up to about 20 at-%. The oxygen content of the aluminum oxynitride film may comprise: up to about 60 at-%; up to about 50 at-%; or up to about 40 at-%; up to about 20 at-%; up to about 10 at-%; up to about 5 at-%; or up to about 2 at-%. The oxygen/aluminum ratio of the aluminum oxynitride film may comprise: up to about 3:2 (O:Al), up to about 2:1, up to about 1:1, up to about 0.5:1, up to about 0.2:1, up to about 0.1:1, or up to about 0.05:1. The hydrogen content of the aluminum oxynitride film may comprise: less than about 30 at-%; less than about 20 at-%; less than about 15 at-%; or less than about 10 at-%. The carbon content of the aluminum oxynitride film may comprise: less than about 20 at-%; less than about 10 at-%; less than about 5 at-%; less than about 2 at-%; or less than about 1 at-%. In at least one embodiment of the invention, the aluminum nitride or aluminum oxynitride film may include other metals as a dopant. The dopant metal may comprise: less than about 30 at-%; less than about 15 at-%; less than about 10 at-%; less than about 5 at-%; or less than about 3 at-%. In some embodiments, an oxygen concentration gradient is introduced to the film during the deposition of the aluminum oxynitride film or after deposition of aluminum nitride and aluminum oxynitride films during an annealing step.

In some embodiments, a deposited aluminum nitride or aluminum oxynitride film may have a step coverage greater than about 50%, greater than about 80%, greater than about 90%, greater than about 95%, greater than about 98%, greater than about 99% or greater in aspect ratios (depth:width) of more than about 2, more than about 5, more than about 10, more than about 20, or in some instances even more than about 40 or more than about 80. It may be noted that aspect ratio may be difficult to determine for the VNAND structures, but in this context aspect ratio could be understood to be also ratio of the total surface area of the structures in the wafer or part of the wafer in relation to the planar surface area of wafer or part of the wafer.

In another embodiment consistent with the invention, the repeat cycle 430 may be performed more times than the repeat cycle 440, leading to more nitrogen incorporation into the charge trapping layer formed. A higher nitrogen content of the charge trapping layer, such as in an aluminum nitride film, formed may result in a faster erase speed of the charge trapping layer and high speed in general is desirable for memory applications. The higher nitrogen content may also improve the scaling capability of the aluminum nitride portion of the film. A higher oxygen content of the charge trapping layer may result in greater erase retention of the charge trapping layer. A higher nitrogen content of the charge trapping layer, such as in the aluminum nitride film, may result in greater program retention of the charge trapping layer. Charge trapping layer properties, such as retention (erase/program) and speed (erase/program) can be tuned by tuning the oxygen content and location of the oxygen, such as oxygen concentration gradient or oxidized portions, of the aluminum nitride or aluminum oxynitride layer.

FIG. 4B illustrates a flow chart for performing a nitrogen precursor cycle 410. The nitrogen precursor cycle 410 may comprise an aluminum precursor pulse 510, an inert gas purge 520, a nitrogen precursor pulse 530, and an inert gas purge 540.

The aluminum precursor pulse 510 may involve pulsing at least one of: a metal organic metal aluminum compound, such as an alkyl aluminum compound; trimethylaluminum (TMA), triethylaluminum (TEA); or an aluminum halide compound, such as AlC1 ₃, for example. The aluminum precursor pulse 510 may involve a flow rate ranging from 1 to 1000 sccm, or from 5 and 200 sccm. The aluminum precursor pulse 510 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The aluminum precursor pulse 510 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The inert gas purge 520 and the inert gas purge 540 may involve purging with at least one of: argon or nitrogen. The inert gas purge 520 and the inert gas purge 540 may involve a flow rate ranging from 5 and 2000 sccm. The inert gas purge 520 and the inert gas purge 540 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The inert gas purge 520 and the inert gas purge 540 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The nitrogen precursor pulse 530 may involve pulsing at least one of: ammonia (NH₃); hydrazine (N₂H₄); nitrogen radicals; nitrogen plasma; or atomic nitrogen. The nitrogen precursor pulse 530 may involve a flow rate ranging from 50 and 10000 sccm. The nitrogen precursor pulse 530 may have a pressure ranging from ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The nitrogen precursor pulse 530 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

FIG. 4C illustrates a flow chart for performing an oxygen precursor cycle 420. The oxygen precursor cycle 420 may comprise an aluminum precursor pulse 610, an inert gas purge 620, an oxygen precursor pulse 630, and an inert gas purge 640.

The aluminum precursor pulse 610 may involve pulsing at least one of: a metal organic metal aluminum compound, such as an alkyl aluminum compound; trimethylaluminum (TMA), triethylaluminum (TEA); or an aluminum halide compound, such as AlC1 ₃, for example. The aluminum precursor pulse 610 may involve a flow rate ranging from 1 to 1000 sccm, or from 5 and 200 sccm. The aluminum precursor pulse 610 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The aluminum precursor pulse 610 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The inert gas purge 620 and the inert gas purge 640 may involve purging with at least one of: argon or nitrogen. The inert gas purge 620 and the inert gas purge 640 may involve a flow rate ranging from 5 and 2000 sccm. The inert gas purge 620 and the inert gas purge 640 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The inert gas purge 620 and the inert gas purge 640 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The oxygen precursor pulse 630 may involve pulsing at least one of: ozone (O₃), diatomic oxygen (O₂), water (H₂O), hydrogen peroxide (H₂O₂), oxygen plasma, atomic oxygen (O), or oxygen radicals. The oxygen precursor pulse 630 may involve a flow rate ranging from 50 and 3000 sccm. The oxygen precursor pulse 630 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The oxygen precursor pulse 630 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

FIG. 4D illustrates a flow chart for performing an oxygen precursor cycle 420. The oxygen precursor cycle 420 may comprise an oxygen precursor pulse 630 and an inert gas purge 640.

The oxygen precursor pulse 630 may involve pulsing at least one of: ozone (O₃), diatomic oxygen (O₂), water (H₂O), hydrogen peroxide (H₂O₂), oxygen plasma, atomic oxygen (O), or oxygen radicals. The oxygen precursor pulse 630 may involve a flow rate ranging from 50 and 3000 sccm. The oxygen precursor pulse 630 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The oxygen precursor pulse 630 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The inert gas purge 640 may involve purging with at least one of: argon or nitrogen. The inert gas purge 640 may involve a flow rate ranging from 5 and 2000 sccm. The inert gas purge 640 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The inert gas purge 640 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

FIG. 5 illustrates a manufacturing method 700 for an aluminum nitride charge trapping layer in accordance with at least one embodiment of the invention. The method 700 comprises an aluminum precursor cycle 710 and a nitrogen precursor cycle 720. The aluminum precursor cycle 710 may be repeated through a repeat cycle 730, while the nitrogen precursor cycle 720 may be repeated through a repeat cycle 740. Both the aluminum precursor cycle 710 and the nitrogen precursor cycle 720 may be repeated through a repeat cycle 750. In another embodiment consistent with the invention, the aluminum precursor cycle 710 may come after the nitrogen precursor cycle 720.

The aluminum precursor pulse 710 may involve pulsing at least one of: a metal organic metal aluminum compound, such as an alkyl aluminum compound; trimethylaluminum (TMA), triethylaluminum (TEA); or an aluminum halide compound, such as AlC1 ₃, for example. The aluminum precursor pulse 710 may involve a flow rate ranging from 1 to 1000 sccm, or from 5 and 200 sccm. The aluminum precursor pulse 710 may have a pressure ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The aluminum precursor pulse 710 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

The nitrogen precursor pulse 720 may involve pulsing at least one of: ammonia (NH₃); hydrazine (N₂H₄); nitrogen radicals; nitrogen plasma; or atomic nitrogen. The nitrogen precursor pulse 720 may involve a flow rate ranging from 50 and 10000 sccm. The nitrogen precursor pulse 720 may have a pressure ranging from ranging from 1 mTorr to 1000 Torr, from 5 mTorr to 50 Torr, from 20 mTorr to 10 Torr, or from 50 mTorr to 5 Torr. The nitrogen precursor pulse 720 may have a temperature ranging from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.

Exemplary reactors in which the aluminum nitride or aluminum oxynitride process may be deposited include, but are not limited to, single-wafer, mini-batch, batch or spatial ALD reactors.

The particular implementations shown and described are illustrative of the invention and its best mode and are not intended to otherwise limit the scope of the aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and/or physical couplings between the various elements. Many alternative or additional functional relationship or physical connections may be present in the practical system, and/or may be absent in some embodiments.

It is to be understood that the configurations and/or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Thus, the various acts illustrated may be performed in the sequence illustrated, in other sequences, or omitted in some cases.

The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof. 

We claim:
 1. A method of forming an aluminum nitride or aluminum oxynitride layer for a NAND device, the method comprising: providing a substrate in a reaction chamber; exposing the substrate to a nitrogen precursor; and exposing the substrate to an aluminum precursor; wherein a reaction between the nitrogen precursor and the aluminum precursor forms an aluminum nitride or aluminum oxynitride layer for a NAND device.
 2. The method of claim 1, wherein the aluminum nitride or aluminum oxynitride layer is a charge trapping layer.
 3. The method of claim 1, wherein exposing the substrate to the nitrogen precursor comprises: pulsing a nitrogen precursor onto the substrate; and purging an inert gas onto the substrate; wherein the nitrogen precursor comprises at least one of: ammonia (NH₃); hydrazine (N₂H₄); nitrogen radicals; nitrogen plasma; or atomic nitrogen; and wherein the inert gas comprises at least one of: argon or nitrogen.
 4. The method of claim 1, wherein exposing the substrate to the aluminum precursor comprises: pulsing an aluminum precursor onto the substrate; and purging an inert gas onto the substrate; wherein the aluminum precursor comprises at least one of: a metal organic metal aluminum compound, such as an alkyl aluminum compound; trimethylaluminum (TMA); triethylaluminum (TEA); or an aluminum halide compound; and wherein the inert gas comprises at least one of: argon or nitrogen.
 5. The method of claim 1, further comprising exposing the substrate to an oxygen precursor.
 6. The method of claim 5, wherein exposing the substrate to the oxygen precursor comprises: pulsing an oxygen precursor onto the substrate; and purging an inert gas onto the substrate; wherein the oxygen precursor comprises at least one of: ozone (O₃); diatomic oxygen (O₂); water (H₂O); hydrogen peroxide (H₂O₂); oxygen plasma; atomic oxygen (O); or oxygen radicals; and wherein the inert gas comprises at least one of: argon or nitrogen.
 7. The method of claim 1, wherein a temperature of the reaction chamber ranges from 20 to 800° C., from 50 to 600° C., from 100 to 450° C., from 150 to 425° C., from 200 to 400° C., or from 250 to 375° C.
 8. The method of claim 2, wherein the charge trapping layer comprises a metal oxynitride such that the desired nitrogen content tunes an erase speed of the charge trapping layer; and wherein the charge trapping layer comprises a metal oxynitride such that the desired oxygen content tunes a retention capability of the charge trapping layer.
 9. The method of claim 2, wherein the charge trapping layer comprises a top oxidized portion; and wherein the semiconductor device further comprises a capping layer disposed on the aluminum nitride or aluminum oxynitride charge trapping layer.
 10. The method of claim 9, wherein the top oxidized portion has a thickness less than 10 nm, less than 5 nm, less than 3 nm or from about 0.1 nm to about 5 nm, from about 0.5 to about 3 nm, or from about 1 to about 2 nm.
 11. The method of claim 1, wherein the NAND device is vertical NAND device and wherein the vertical NAND comprises: an oxide core or hole; a channel; a tunnel oxide; a charge trapping layer comprising at least one of: aluminum nitride or aluminum oxynitride; and a first blocking oxide; wherein the charge trapping layer comprises a nitrogen component that tunes an erase speed of the charge trapping layer and tunes a retention capability of the charge trapping layer.
 12. The method of claim 11, wherein the vertical NAND device further comprises: a second blocking oxide; and a control gate; wherein the first blocking oxide and the second blocking oxide comprise at least one of: aluminum oxide; silicon oxide; or a combination of oxides.
 13. The method of claim 11, wherein the charge trapping layer is formed with an aluminum precursor comprising at least one of: a metal organic metal aluminum compound, such as an alkyl aluminum compound; trimethylaluminum (TMA), triethylaluminum (TEA); or an aluminum halide compound.
 14. The method of claim 11, wherein the charge trapping layer is formed with a nitrogen precursor comprising at least one of: ammonia (NH₃); hydrazine (N₂H₄); nitrogen radicals; nitrogen plasma; or atomic nitrogen.
 15. The method of claim 11, wherein the charge trapping layer is formed with an oxygen precursor comprising at least one of: ozone (O₃); diatomic oxygen (O₂); water (H₂O); hydrogen peroxide (H₂O₂); oxygen plasma; atomic oxygen (O); or oxygen radicals.
 16. The method of claim 11, wherein the charge trapping layer comprises a top oxidized portion; and wherein the semiconductor device further comprises a capping layer disposed on the charge trapping layer.
 17. The method of claim 16, wherein the top oxidized portion comprises at least one of: only aluminum oxide; up to 40 at-% of oxygen; up to 50 at-% of oxygen; or up to 60 at-% of oxygen.
 18. The method of claim 16, wherein the top oxidized portion comprises at least one of: about pure aluminum nitride; less than a maximum of approximately 99 mol-% of Al₂O₃, less than a maximum of approximately 98 mol-% of Al₂O₃, less than a maximum of approximately 95 mol-% of Al₂O₃, less than a maximum of approximately 90 mol-% of Al₂O₃; or less than a maximum of about 80 mol-% of Al₂O₃.
 19. The method of claim 16, wherein an aluminum nitride composition of the charge trapping layer comprises at least one of: more than about 25 mol-% of AlN; more than about 50 mol-% of AlN; more than about 75 mol-% of AlN; more than about 85 mol-% of AlN; more than about 90 mol-% of AlN; or more than about 95 mol-% of AlN.
 20. The method of claim 16, wherein the top oxidized portion has a thickness less than 10 nm, less than 5 nm, less than 3 nm or from about 0.1 nm to about 5 nm, from about 0.5 to about 3 nm, or from about 1 to about 2 nm. 